| PART |
Description |
Maker |
| SUP36N20-54P |
N-Channel 200-V (D-S) 150 Celsius MOSFET
|
Vishay Siliconix
|
| TLP150-M TLP150N-99S12J TLP150N-99S24J |
150 W on main channel with only 200 LFM
|
Emerson Network Power
|
| 2N8768 |
N-Channel Power MOSFETs 30 A,150 V/200 V
|
New Jersey Semi-Conductor Products, Inc.
|
| MTP2N20 MTP2N18 IRF610 IRF611 IRF612 IRF613 |
N-Channel Power MOSFETs 3.5 A, 150-200 V
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 2N2505 |
Silicon Controlled Rectifier; Package: TO-93; IT (Av) (A): 150; VTM (V): 1.7; VGT (V): 3; IGT (µA): 150; Vrrm (V): 200; 235.5 A, SCR, TO-93
|
Microsemi, Corp.
|
| MJH11017 MJH11020 MJH11019 MJH11021 MJH11022 MJH11 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 200 250 VOLTS 150 WATTS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SP0610LE-6288 BSS129E-6325 BSS149E-6288 |
180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
350 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| LTI202FD |
200 V doubler 10-12.5 A forward current, 150 ns recovery time
|
Voltage Multipliers
|
| 3402FA |
200 V three phase bridge 18-20 A forward current, 150 ns recovery time
|
Voltage Multipliers
|
| 150KSR200M 152KR300AMPBF |
150 A, 200 V, SILICON, RECTIFIER DIODE
150 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
|
|
